High conductivity and transparent ZnO:Al films prepared at low temperature by DC and MF magnetron sputtering

被引：84

作者：

Guillen, C. ^{[1
]}

Herrero, J. ^{[1
]}

机构：

[1] CIEMAT, Renewable Energy Div, E-28040 Madrid, Spain

来源：

THIN SOLID FILMS | 2006年 / 515卷 / 02期

关键词：

sputtering; transparent conductive oxide (TCO); structure;

D O I：

10.1016/j.tsf.2005.12.227

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aluminum-doped zinc oxide thin films have been deposited by DC and MF magnetron sputtering from a ceramic oxide target in argon atmosphere without direct heating of the substrates. The samples were prepared at different predetermined conditions of input power or discharge voltage and the influence upon electronic, optical, and microstructural properties has been investigated. The as-deposited layers show low resistivity, such as 9 x 10(-4) Omega cm minimum for DC excitation and 1.2 x 10(-3) Omega cm for MF mode, with growth rates up to 130 nm/min, and resulting substrate temperatures always below 200 degrees C. Low resistivity of the films is combined with high transmission, 85-90% in the visible wavelength range (400-800 nm). A strong (002) texture perpendicular to the substrate has been found, with lower strain for DC than for MF sputtering. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：640 / 643

页数：4

共 14 条

[1] Optimization of the electrical properties of magnetron sputtered aluminum-doped zinc oxide films for opto-electronic applications [J].