Diode-pumped passively mode-locked Nd:GdVO4 laser with a GaAs saturable absorber mirror

被引：52

作者：

Kong, J ^{[1
]}

Tang, DY

Ng, SP

Zhao, B

Qin, LJ

Meng, XL

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Shandong Univ, Natl Lab Crystal Mat, Jinan 250100, Peoples R China

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 2004年 / 79卷 / 02期

关键词：

D O I：

10.1007/s00340-004-1539-x

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on a diode end-pumped passively mode-locked Nd: GdVO4 laser. By using a GaAs wafer simultaneously as the saturable absorber and the output coupler, stable continuous-wave mode locking was achieved. The pulse width was measured to be 18.9 picoseconds at a repetition rate of 370 MHz. The most remarkable property of the laser is that its repetition rate can be changed from 370 MHz to 3.348 GHz by simply changing the cavity length. An average output power of 3.46 W at a 3.348 GHz repetition rate was obtained with a 14 W pump power. To our knowledge, this is the first demonstration of a passively mode-locked Nd : GdVO4 laser using a GaAs wafer as the saturable absorber.

引用

页码：203 / 206

页数：4

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