Thermally stable, highly conductive, and transparent ZnO layers prepared in situ by chemical vapor deposition

被引：34

作者：

Ataev, BM ^{[1
]}

Bagamadova, AM ^{[1
]}

Mamedov, VV ^{[1
]}

Omaev, AK ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Phys, Daghestan Sci Ctr, Makhachkala 367003, Russia

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 65卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

thermally stable conducting and transparent ZnO films; chemical vapor deposition;

D O I：

10.1016/S0921-5107(99)00166-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is possible to fabricate thin epitaxial ZnO layers doped in situ with In and Ga impurities by chemical vapor deposition (CVD) in a low-pressure system. Highly conductive and transparent ZnO:Me (0.1-2 wt.%) films are deposited on (1012) sapphire substrates. Electrical, optical, and structural properties of the films are investigated. The ZnO:Me thin epitaxial layers (TEL) features unique thermal stability of their electric properties to thermocyclings within the 300-950 K temperature range in various ambient. It is found that the crystal structure perfection must be among the main factors conditioning the thermal stability of the films. It is suggested a formation of metal cluster structures-whiskers over the doped film surface. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：159 / 163

页数：5

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