Ce-doped TiO2 insulators in thin film electroluminescent devices

Cerium-doped TiO2 thin films have been prepared by reactive RF sputtering. At low Ce concentration, X-ray diffraction indicates that the films have the anatase structure. Ce concentrations higher than 1.2at.% result in an amorphization of the him which remains stable up to 873K. The TiO2 electrical properties have been stabilized and improved by cerium doping, resulting in a lower conductivity (10(-9)Omega(-1)m(-1)), a higher electrical breakdown strength (2 x 10(7) V/m), and a high value of the permittivity (45 +/- 5). The implementation of amorphous TiO2:Ce thin films as insulator layers in ZnS:Mn alternating current thin film electroluminescent devices (ACTFELD) results in a significant drop in the threshold operating voltage and a notable increase in the device brightness compared with ACTFELD containing Y2O3 or BaTaxO6 insulator layers. Rapid thermal annealing further improves the performance of the electroluminescent device.