Growth and structure of electron beam evaporated V2O5 thin films

被引：24

作者：

Ramana, CV ^{[1
]}

Hussain, OM ^{[1
]}

Naidu, BS ^{[1
]}

机构：

[1] SRI VENKATESWARA UNIV,DEPT PHYS,THIN FILM LAB,TIRUPATI 517502,ANDHRA PRADESH,INDIA

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1997年 / 50卷 / 03期

关键词：

V2O5 thin films; growth; structure; electrical conductivity;

D O I：

10.1016/S0254-0584(97)01914-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth, structure and room temperature electrical conductivity of electron beam evaporated V2O5 thin films were studied in detail as a function of deposition temperature. The films deposited at T-s approximate to 553 K and subsequently annealed in oxygen atmosphere at 693 K exhibited orthorhombic layered structure. (C) 1997 Elsevier Science S.A.

引用

页码：195 / 199

页数：5

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