Composition dependence of ferroelectric properties of epitaxial Pb(ZrxTi1-x)O3 thin films grown by metalorganic chemical vapor deposition

被引：25

作者：

Oikawa, T

Aratani, M

Saito, K

Funakubo, H

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] Philips Japan Ltd, Analyt Dept, Applicat Lab, Sagamihara, Kanagawa 2288505, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷

关键词：

crystal structure; metalorganic chemical vapor deposition; ferroelectric materials;

D O I：

10.1016/S0022-0248(01)01970-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ferroelectricity of Pb(ZrxTi1-x)O-3 (PZT) thin films prepared on (001)SrRuO3//(001)SrTiO3 substrates was investigated by changing the Zr/(Zr + Ti) ratio in the film. (001)- and (100)-oriented tetragonal and (10 0)-oriented rhombohedral PZT films were epitaxially grown. Spontaneous polarization (P-s) and coercive field (E-c) values had minimum near the Zr/(Zr + Ti) ratio of morphotropic phase boundary and the latter decreased with increasing the Zr/ (Zr + Ti) ratio. The Zr/(Zr + Ti) ratio dependence of P-s and E-c was in good agreement with the estimation from the crystal symmetry. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：455 / 458

页数：4

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