Highly efficient 808 nm range Al-free lasers by gas source MBE

被引：9

作者：

Ovtchinnikov, A ^{[1
]}

Nappi, J ^{[1
]}

Aarik, J ^{[1
]}

Mohrdiek, S ^{[1
]}

Asonen, H ^{[1
]}

机构：

[1] TUTCORE LTD,FIN-33721 TAMPERE,FINLAND

来源：

FABRICATION, TESTING, AND RELIABILITY OF SEMICONDUCTOR LASERS II | 1997年 / 3004卷

关键词：

gas source MBE; aluminum-free laser diodes;

D O I：

10.1117/12.273828

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Aluminum-free material has proved to be very promising for lasers of 800 - 1000 nm wavelength range. Up to now the most widely used growth method of GaInAsP quaternary alloys was Metal-Organic Chemical Vapor Deposition (MOCVD) technique. Gas Source Molecular Beam Epitaxy (GSMBE) is also able to produce high-quality Al-free material for optoelectronics. This paper aims to present the direct comparison of laser material quality grown by MOCVD and GSMBE. The easiness of composition control, flexibility of the deposition process and composition uniformity in GSMBE-grown material allowed us to further improve the performance of laser diodes operating at 800 nm wavelength range.

引用

页码：34 / 42

页数：9