Thin film characterization by atomic force microscopy at ultrasonic frequencies

被引：52

作者：

Crozier, KB ^{[1
]}

Yaralioglu, GG ^{[1
]}

Degertekin, FL ^{[1
]}

Adams, JD ^{[1
]}

Minne, SC ^{[1
]}

Quate, CF ^{[1
]}

机构：

[1] Stanford Univ, Edward L Ginzton Lab, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 14期

关键词：

D O I：

10.1063/1.126222

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a technique in which atomic force microscopy at ultrasonic frequencies is used to determine the thickness of thin films. In this technique, the resonance frequency of a flexural mode of an atomic force microscope cantilever is used to determine the tip-sample contact stiffness. This allows the film thickness to be determined, provided that the tip and sample elastic moduli and radii of curvature are known. We report experimental results for thin metal and polymer films deposited on silicon substrates and compare them with the predictions of a theoretical model. (C) 2000 American Institute of Physics. [S0003-6951(00)00114-5].

引用

页码：1950 / 1952

页数：3

共 15 条

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