Ab initio study of misfit dislocations at the SiC/Si(001) interface -: art. no. 156101

被引：29

作者：

Cicero, G

Pizzagalli, L

Catellani, A

机构：

[1] Politecn Torino, INFM, I-10129 Turin, Italy

[2] Politecn Torino, Dept Phys, I-10129 Turin, Italy

[3] CNRS, LMP, F-86962 Futuroscope, France

[4] CNR, IMEM, I-43010 Parma, Italy

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 89卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.89.156101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The high lattice mismatched SiC/Si(001) interface was investigated by means of combined classical and ab initio molecular dynamics. Among the several configurations analyzed, a dislocation network pinned at the interface was found to be the most efficient mechanism for strain relief. A detailed description of the dislocation core is given, and the related electronic properties are discussed for the most stable geometry: we found interface states localized in the gap that may be a source of failure of electronic devices.

引用

页码：156101/1 / 156101/4

页数：4

共 18 条

[1] Atomic and electronic structure and interatomic potentials at a polar ceramic/metal interface: {222}MgO/Cu [J].