Poly(2,5-bis(2-thienyl)-3,6-dialkylthieno[3,2-b]thiophene)s-high-mobility semiconductors for thin-film transistors

被引:162
作者
Li, Yuning
Wu, Yiliang
Liu, Ping
Birau, Maria
Pan, Hualong
Ong, Beng S.
机构
[1] Xerox Res Ctr Canada Ltd, Mat Design & Integrat Lab, Mississauga, ON L5K 2L1, Canada
[2] McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L7, Canada
关键词
D O I
10.1002/adma.200601204
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Field-effect transistor properties, structural design, synthesis, and characterization of the poly(2,5-bis(2-thienyl)-3,6dialkylthieno[3,2-blthiophene) thin-film semiconductors shown in the figure are described. Using low-temperature solution fabrication of channel semiconductors under ambient conditions, a mobility of 0.25 cm(2) V-1 sm(-1) and a current on/off ratio of W are obtained.
引用
收藏
页码:3029 / +
页数:5
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