Model dielectric function for amorphous semiconductors

被引：36

作者：

Adachi, S ^{[1
]}

Mori, H ^{[1
]}

Ozaki, S ^{[1
]}

机构：

[1] Gunma Univ, Fac Engn, Dept Elect Engn, Kiryu, Gumma 3768515, Japan

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.66.153201

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

We apply a model dielectric function, which was developed for modeling the optical spectra of crystalline semiconductors, to investigate the optical response in amorphous (a) semiconductors. By comparing the experimental valence- and conduction-band densities of states with the band theory, it is supported that the short-range order (chemical gap) is important to understand the epsilon(E) spectra both for crystalline and amorphous semiconductors. Analyses are presented for a-Si, and results are in satisfactory agreement with the experimental data over the entire range of photon energies.

引用

页码：1 / 4

页数：4

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