Electric-field-induced changes in scanning tunneling microscopy images of metal surfaces

被引:20
作者
Heinze, S
Nie, X
Blügel, S
Weinert, M
机构
[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[2] Univ Hamburg, Zentrum Mikrostrukturforsch, D-20355 Hamburg, Germany
[3] Brookhaven Natl Lab, Dept Phys, Upton, NY 11973 USA
关键词
D O I
10.1016/S0009-2614(99)01210-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Electric-field-dependent changes of scanning tunneling microscopy (STM) images of metal surfaces, metallic surface alloys, and ultra-thin magnetic films are predicted. We present a two-state model that demonstrates the general conditions leading to an inversion of the corrugation pattern as a function of field strength, and relate the effects to field-induced changes of the potential barrier. This image reversal for a pure metal surface corresponds to a change from a normal to an anticorrugated STM image. For ordered surface alloys, a switch of the imaged chemical species is possible and may even cause a change from a p(1 X 1) to a c(2 X 2) image at different fields. We explicitly demonstrate the effects by first-principles calculations of the Fe(001) surface. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:167 / 172
页数:6
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