The influence of electron-hole-scattering on the gain spectra of highly excited semiconductors

被引：46

作者：

Hughes, S

Knorr, A

Koch, SW

Binder, R

Indik, R

Moloney, JV

机构：

[1] UNIV MARBURG,ZENTRUM MAT WISSENSCH,D-35032 MARBURG,GERMANY

[2] UNIV ARIZONA,CTR OPT SCI,TUCSON,AZ 85721

[3] UNIV ARIZONA,DEPT MATH,TUCSON,AZ 85721

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 100卷 / 08期

关键词：

semiconductors; carrier-carrier interaction; optical properties;

D O I：

10.1016/0038-1098(96)00494-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A microscopic treatment of the influence of electron-hole-scattering on the optical dephasing and the lineshape in semiconductor gain media is presented. The calculations incorporate non-diagonal- and diagonal-scattering contributions to the optical polarisation. The strong compensation between both contributions leads to gain spectra, which are significantly modified in comparison to those obtained using a pure dephasing approximation. Copyright (C) 1996 Published by Elsevier Science Ltd

引用

页码：555 / 559

页数：5

共 8 条

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[2]

Haug H., 2009, QUANTUM THEORY OPTIC

[3]

INDIK RA, IN PRESS PHYS REV A

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