Cracking of low temperature solution deposited CeO2 thin films

被引：11

作者：

Goh, Gregory K. L. ^{[1
]}

Tay, Christine S. S. ^{[1
]}

Chan, Kelvin Y. S. ^{[1
]}

Gosvami, N. ^{[1
]}

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

JOURNAL OF ELECTROCERAMICS | 2006年 / 16卷 / 04期

关键词：

CeO2; porosity; film cracking;

D O I：

10.1007/s10832-006-9922-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Crystalline CeO2 films grown in aqueous solutions at 45 degrees C on glass slides formed by the island growth mode. The film had a refractive index of 1.83 and indicated that the film had a porosity of 41.3%, which significantly lowered the elastic stiffness of the film. The film cracked only after drying in a mud crack pattern when it reached a critical thickness. This indicated that the film cracked under tensile stress due to the accumulation of tensile strains generated from grain coalescence during growth, thermal expansion mismatch during cooling and capillary stress during drying.

引用

页码：575 / 579

页数：5

共 28 条

[1] Study of the cracking of highly porous p+ type silicon during drying [J].