Possible indication of interlayer exchange coupling in GaMnAs/GaAs ferromagnetic semiconductor superlattices

被引：29

作者：

Chung, SJ ^{[1
]}

Lee, S

Park, IW

Liu, X

Furdyna, JK

机构：

[1] Korea Univ, Dept Phys, Seoul 136701, South Korea

[2] Korean Basic Sci Inst, Seoul 136701, South Korea

[3] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 11期

关键词：

D O I：

10.1063/1.1676025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the effect of free carriers in the nonmagnetic spacer layer on the magnetic properties of GaMnAs/GaAs superlattice (SL) systems. One of the SLs contained GaAs layers doped with Be (which acts as a p-type dopant), while the GaAs layers of the other SL were undoped. While the Be-doped SL exhibited relatively robust temperature dependence of remanent magnetization and large coercivity, the undoped SL showed a fast decrease of remanent magnetization with the temperature and rather small coercivity. We propose that the observed hardness of magnetization in the SL with Be-doped GaAs layers is related to interlayer coupling introduced by doping of the nonmagnetic layers. (C) 2004 American Institute of Physics.

引用

收藏

页码：7402 / 7404

页数：3

相关论文

共 14 条

[1] Interlayer exchange in (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures [J].

Akiba, N ;

Matsukura, F ;

Shen, A ;

Ohno, Y ;

Ohno, H ;

Oiwa, A ;

Katsumoto, S ;

Iye, Y .

APPLIED PHYSICS LETTERS, 1998, 73 (15) :2122-2124

[2] Injection and detection of a spin-polarized current in a light-emitting diode [J].

Fiederling, R ;

Keim, M ;

Reuscher, G ;

Ossau, W ;

Schmidt, G ;

Waag, A ;

Molenkamp, LW .

NATURE, 1999, 402 (6763) :787-790

[3] LAYERED MAGNETIC-STRUCTURES - EVIDENCE FOR ANTIFERROMAGNETIC COUPLING OF FE LAYERS ACROSS CR INTERLAYERS [J].

GRUNBERG, P ;

SCHREIBER, R ;

PANG, Y ;

BRODSKY, MB ;

SOWERS, H .

PHYSICAL REVIEW LETTERS, 1986, 57 (19) :2442-2445

[4] Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor [J].

Hanbicki, AT ;

Jonker, BT ;

Itskos, G ;

Kioseoglou, G ;

Petrou, A .

APPLIED PHYSICS LETTERS, 2002, 80 (07) :1240-1242

[5] Quantum computation with quantum dots [J].

Loss, D ;

DiVincenzo, DP .

PHYSICAL REVIEW A, 1998, 57 (01) :120-126

[6] Ferromagnetism and interlayer exchange coupling in short-period (Ga,Mn)As/GaAs superlattices [J].

Mathieu, R ;

Svedlindh, P ;

Sadowski, J ;

Swiatek, K ;

Karlsteen, M ;

Kanski, J ;

Ilver, L .

APPLIED PHYSICS LETTERS, 2002, 81 (16) :3013-3015

[7] Making nonmagnetic semiconductors ferromagnetic [J].

Ohno, H .

SCIENCE, 1998, 281 (5379) :951-956

[8] Electrical spin injection in a ferromagnetic semiconductor heterostructure [J].

Ohno, Y ;

Young, DK ;

Beschoten, B ;

Matsukura, F ;

Ohno, H ;

Awschalom, DD .

NATURE, 1999, 402 (6763) :790-792

[9] Magnetic interlayer coupling in ferromagnet/insulator/ferromagnet structures [J].

Platt, CL ;

McCartney, MR ;

Parker, FT ;

Berkowitz, AE .

PHYSICAL REVIEW B, 2000, 61 (14) :9633-9641

[10] Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs [J].

Potashnik, SJ ;

Ku, KC ;

Chun, SH ;

Berry, JJ ;

Samarth, N ;

Schiffer, P .

APPLIED PHYSICS LETTERS, 2001, 79 (10) :1495-1497