Enhanced luminescence in top-gate-type organic light-emitting transistors

被引：16

作者：

Park, B ^{[1
]}

Takezoe, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Organ & Polymer Mat, Meguro Ku, Tokyo 1528552, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 07期

关键词：

D O I：

10.1063/1.1784044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the structure and operating characteristics of top-gate-type organic light-emitting transistors (OLETs). The OLET is composed of an anode (source), organic layers including an organic electroluminescent (EL) layer, a cathode (drain) being opposed to the anode, and a gate, formed outside of the region between the anode and the cathode. EL characteristics of the OLET show that the luminescent intensity from the organic layers can be balanced by applying the bias voltage of the gate electrode. (C) 2004 American Institute of Physics.

引用

页码：1280 / 1282

页数：3

共 28 条

[1] High-efficiency organic electrophosphorescent devices with tris(2-phenylpyridine)iridium doped into electron-transporting materials [J].

Adachi, C ;

Baldo, MA ;

Forrest, SR ;

Thompson, ME .

APPLIED PHYSICS LETTERS, 2000, 77 (06) :904-906

[2]

[Anonymous], P 11 INT WORKSH IN O

[3] Highly efficient phosphorescent emission from organic electroluminescent devices [J].

Baldo, MA ;

O'Brien, DF ;

You, Y ;

Shoustikov, A ;

Sibley, S ;

Thompson, ME ;

Forrest, SR .

NATURE, 1998, 395 (6698) :151-154

[4] Improved band alignment for hole injection by an interfacial layer in organic light emitting devices [J].

Chkoda, L ;

Heske, C ;

Sokolowski, M ;

Umbach, E .

APPLIED PHYSICS LETTERS, 2000, 77 (08) :1093-1095

[5] Improved drive voltages of organic electroluminescent devices with an efficient p-type aromatic diamine hole-injection layer [J].

Ganzorig, C ;

Fujihira, M .

APPLIED PHYSICS LETTERS, 2000, 77 (25) :4211-4213

[6] ALL-POLYMER FIELD-EFFECT TRANSISTOR REALIZED BY PRINTING TECHNIQUES [J].

GARNIER, F ;

HAJLAOUI, R ;

YASSAR, A ;

SRIVASTAVA, P .

SCIENCE, 1994, 265 (5179) :1684-1686

[7] Space-charge-limited charge injection from indium tin oxide into a starburst amine and its implications for organic light-emitting diodes [J].

Glebeler, C ;

Antoniadis, H ;

Bradley, DDC ;

Shirota, Y .

APPLIED PHYSICS LETTERS, 1998, 72 (19) :2448-2450

[8]

Gong X, 2002, ADV MATER, V14, P581, DOI 10.1002/1521-4095(20020418)14:8<581::AID-ADMA581>3.0.CO

[9]

2-B

[10] Investigation of nanostructures in ordinary Portland cement through positron annihilation lifetime spectroscopy [J].

Consolati, G ;

Dotelli, G ;

Quasso, F .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) :4225-4231

← 1 2 3 →