Characterization of ultrathin doping layers in semiconductors

The compositional profile of a narrow layer of InAsxP1-x in InP has been determined using energy-filtered Fresnel contrast analysis, high-resolution electron microscopy (HREM), and high-angle annular dark-field (HAADF) imaging. The consistency of the results obtained using the three techniques is discussed, and conclusions are drawn both about the validity of interpreting the magnitude of Fresnel contrast data quantitatively and about the degree to which high-angle annular dark-field images of such materials are affected by inelastic scattering and strain.