Simulation of hydrogen trapping at defects in Pd

被引:16
作者
Gesari, S. B. [1 ]
Pronsato, M. E. [1 ]
Juan, A. [1 ]
机构
[1] Univ Nacl Sur, Dept Fis, RA-8000 Bahia Blanca, Buenos Aires, Argentina
关键词
Palladium; Hydrogen; Dislocation; SINGLE-CRYSTAL PD; ELECTRONIC-STRUCTURE; EDGE DISLOCATIONS; DEUTERIUM ATOMS; STACKING-FAULT; H-PAIRS; BCC FE; PALLADIUM; SURFACES; SOLUBILITY;
D O I
10.1016/j.ijhydene.2009.02.048
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The interaction of hydrogen with defects in palladium was studied using qualitative electronic structure calculations in the framework of the Atom Superposition and Electron Delocalization Molecular Orbital (ASED-MO) theory. Interatomic distances, energies and electronic structure for hydrogen at a dislocation and at a vacancy were determined and compared with that for an octahedral site in the Pd fcc lattice. We found that a repulsive H-H interaction is developed if these atoms occupy interstitial sites in a regular lattice. However, when the H atoms are close to a dislocation, the accumulation becomes possible. it was found that the dislocation allows hydrogen association at interatomic distances close to molecular hydrogen. The Density of States (DOS) and Crystal Orbital Overlap Population (COOP) curves were used to shed more light on the interstitial-Pd-defect interactions. Hydrogen produce changes in the local and global electronic structure of the host metal and induce changes in the cohesive forces between atoms in the host matrix. In all cases, it was found that strong bonds between Pd and H atoms are formed while metal-metal bonds are weakened. The metal-hydrogen bonds were characterized by charge transfer from metal atoms to hydrogen. (C) 2009 International Association for Hydrogen Energy. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:3511 / 3518
页数:8
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