Electric and magnetic dipole two-photon absorption in semiconductors

被引：6

作者：

Michaelis, JS ^{[1
]}

Unterrainer, K ^{[1
]}

Gornik, E ^{[1
]}

Bauser, E ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH, D-70569 STUTTGART 80, GERMANY

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.54.7917

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nonlinear spectroscopy of the exciton fine structure in GaAs has allowed us to measure simultaneously both magnetic dipole two-photon absorption and electric dipole one-photon absorption. The splitting of the excitonic ground state into the spin-allowed orthoexciton and the spin-forbidden paraexciton gives the electron-hole exchange energy directly. The peak assignment is proved by nonlinear magnetoabsorption. Utilizing electric dipole two-photon magnetoabsorption within the same experiment, a rich fine structure of the 2P exciton has been observed that has not been previously resolved.

引用

页码：7917 / 7920

页数：4

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