Subharmonic gap structure in short ballistic graphene junctions

被引：44

作者：

Cuevas, J. C. ^{[1
]}

Yeyati, A. Levy

机构：

[1] Univ Autonoma Madrid, Dept Fis Teor Mat Condensada, E-28049 Madrid, Spain

[2] Univ Karlsruhe, Inst Theoret Festkorperphys, D-76128 Karlsburg, Germany

[3] Forschungszentrum Karlsruhe, Inst Nanotechnol, D-76021 Karlsruhe, Germany

来源：

PHYSICAL REVIEW B | 2006年 / 74卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.74.180501

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a theoretical analysis of the current-voltage characteristics of a ballistic superconductor-normal-superconductor (SNS) junction, in which a strip of graphene is coupled to two superconducting electrodes. We focus in the short-junction regime, where the length of the strip is much smaller than superconducting coherence length. We show that the differential conductance exhibits a very rich subharmonic gap structure which can be modulated by means of a gate voltage. On approaching the Dirac point the conductance normalized by the normal-state conductance is identical to that of a short diffusive SNS junction.

引用

页数：4

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