SrLaGaO4-SrLaAlO4 solid solutions - Substrate materials with tuneable lattice parameter for various HTSC compounds

The increase in T-c for high temperature superconductors can be realized, among others, by appropriate substrate/film combinations. SrLaGaO4-SrLaAlO4 solid solutions were grown by the Czochralski method. The already achieved results allow to obtain single crystals of SrLaGa1-xAlxO4 with lattice constant a in the range from 0.3754 to 0.3775 nm, and SrLaGa1-xAlxO4 crystals with lattice constant a in the range from 0.3843 to 0.3826 nm. Electron-probe microanalysis along obtained single crystals was used for determination of segregation coefficient between aluminum and gallium ions.