RF CMOS comes of age

被引：120

作者：

Abidi, AA ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2004年 / 39卷 / 04期

关键词：

D O I：

10.1109/JSSC.2004.825247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

All-CMOS radio transceivers and systems-on-a-chip are rapidly making inroads into a wireless market that for years was dominated by bipolar and BiCMOS solutions. It is not a matter of replacing bipolar transistors in known circuit topologies with FETs; the wave of RF CMOS brings with it new architectures and unprecedented levels of integration. What are its origins? What is the commercial impact? How will RF CMOS evolve in the future? This paper offers a retrospective and a perspective.

引用

页码：549 / 561

页数：13

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