Efficient lasing in a Fe2+:ZnSe crystal at room temperature

被引：90

作者：

Akimov, V. A.

Voronov, A. A.

Kozlovsky, V. I.

Korostelin, Yu. V.

Landman, A. I.

Podmar'kov, Yu. P.

Frolov, M. P.

机构：

[1] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Russia

[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia

来源：

QUANTUM ELECTRONICS | 2006年 / 36卷 / 04期

关键词：

IR lasers; tunable solid-state lasers; Fe2+:ZnSe crystals;

D O I：

10.1070/QE2006v036n04ABEH013139

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Efficient room-temperature lasing is obtained in a Fe2+ : ZnSe crystal pumped by 2.9364-mu m giant pulses from an Er:YAG laser. The slope efficiency of a Fe2+ : ZnSe laser with respect to the absorbed pump energy is 13%. The laser with a dispersion resonator can be continuously tuned from 3.95 to 5.05 mu m. The luminescence lifetime of the T-5(2) level of the Fe2+ ion in a ZnSe matrix at room temperature is measured to be 355 +/- 15 ns.

引用

页码：299 / 301

页数：3

共 6 条

[1] 4.0-4.5-μm lasing of Fe:ZnSe below 180 K, a new mid-infrared laser material [J].

Adams, JJ ;

Bibeau, C ;

Page, RH ;

Krol, DM ;

Furu, LH ;

Payne, SA .

OPTICS LETTERS, 1999, 24 (23) :1720-1722

[2]

Akimov VA, 2004, QUANTUM ELECTRON+, V34, P912, DOI [10.1070/QE2004v034n10ABEH002789, 10.1070/QE2004v034no10ABEH002789]

[3] 3.9-4.8 μm gain-switched lasing of Fe:ZnSe at room temperature [J].

Kernal, J ;

Fedorov, VV ;

Gallian, A ;

Mirov, SB ;

Badikov, VV .

OPTICS EXPRESS, 2005, 13 (26) :10608-10615

[4] Vapour growth of II-VI solid solution single crystals [J].

Korostelin, YV ;

Kozlovsky, VI ;

Nasibov, AS ;

Shapkin, PV .

JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) :181-185

[5] Passive Fe2+ :: ZnSe single-crystal Q switch for 3-μm lasers [J].

Voronov, AA ;

Kozlovskii, VI ;

Korostelin, YV ;

Landman, AI ;

Podmar'kov, YP ;

Polushkin, VG ;

Frolov, MP .

QUANTUM ELECTRONICS, 2006, 36 (01) :1-2

[6] Laser parameters of a Fe:ZnSe crystal in the 85-255-K temperature range [J].

Voronov, AA ;

Kozlovskii, VI ;

Korostelin, YV ;

Landman, AI ;

Podmar'kov, YP ;

Frolov, MP .

QUANTUM ELECTRONICS, 2005, 35 (09) :809-812

← 1 →