Self-Supported Ion-Conductive Membrane-Based Transistors

被引：29

作者：

Kaihovirta, Nikolai J. ^{[1
,2
,3
]}

Wikman, Carl-Johan ^{[1
,4
]}

Makela, Tapio ^{[1
,2
]}

Wilen, Carl-Eric ^{[1
,4
]}

Osterbacka, Ronald ^{[1
,2
]}

机构：

[1] Abo Akad Univ, Ctr Funct Mat, SF-20500 Turku, Finland

[2] Abo Akad Univ, Dept Phys, SF-20500 Turku, Finland

[3] Turku Univ, Grad Sch Mat Res, Turku 20500, Finland

[4] Abo Akad Univ, Lab Polymer Technol, SF-20500 Turku, Finland

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 24期

基金：

芬兰科学院;

关键词：

FIELD-EFFECT TRANSISTORS; LOW-VOLTAGE; GATE DIELECTRICS; OPTIMIZATION; POLYANILINE; ELECTRONICS;

D O I：

10.1002/adma.200801817

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new type of low-voltage orgranic transistor is manufactured using a thick ion-conducting membrane as gate insulator. High current output at 1 V of operation is achieved. The versatile properties of the novel insulator are shown by driving an electrochromic display pixel and a transistor on the same membrane.

引用

页码：2520 / +

页数：5

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