Effect of CoFe composition of the spin-valvelike ferromagnetic tunnel junction

被引：38

作者：

Kikuchi, H ^{[1
]}

Sato, M ^{[1
]}

Kobayashi, K ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.372610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The magnetoresistance (MR) ratio of a ferromagnetic tunnel junction with a spin-valvelike structure of NiFe/CoFex/Al-O/CoFex/NiFe/IrMn/Al is dependent upon CoFe composition. MR ratio increases with increasing Fe content, and shows a maximum of 42% for Fe content 26 at. % after annealing at 225 degrees C. Before annealing, the bias voltage dependence depend on Fe content, however, the bias voltage dependence did not depend on Fe content after annealing. We think that the increasing defect states in the barrier layer with the increasing Fe content in CoFex layer cause the degradation of the bias voltage dependence. After annealing, the defect states of samples decrease to same level, and the bias voltage dependencies of samples are improved and become same. (C) 2000 American Institute of Physics. [S0021-8979(00)62408-8].

引用

页码：6055 / 6057

页数：3

共 9 条

[1] Assisted tunneling in ferromagnetic junctions and half-metallic oxides [J].