Cu2ZnSnS4 thin film solar cells from electroplated precursors: Novel low-cost perspective

被引：362

作者：

Ennaoui, A. ^{[1
]}

Lux-Steiner, M. ^{[1
]}

Weber, A. ^{[1
]}

Abou-Ras, D. ^{[1
]}

Koetschau, I. ^{[1
]}

Schock, H. -W. ^{[1
]}

Schurr, R. ^{[2
]}

Hoelzing, A. ^{[2
]}

Jost, S. ^{[2
]}

Hock, R. ^{[2
]}

Voss, T. ^{[3
]}

Schulze, J. ^{[3
]}

Kirbs, A. ^{[3
]}

机构：

[1] Helmholtz Zentrum Berlin, Mat Energie GmbH, Solar Energy Div, D-14109 Berlin, Germany

[2] Univ Erlangen Nurnberg, D-91058 Erlangen, Germany

[3] Atotech Deutschland GmbH, D-10553 Berlin, Germany

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 07期

关键词：

Electroplating; Precursor sulfurisation; Cu-poor; Cu2ZnSnS4; Solar-cell;

D O I：

10.1016/j.tsf.2008.11.061

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin-film solar cells based on Cu2ZnSnS4 (CZTS) absorbers were fabricated successfully by solid-state reaction in H2S atmosphere of electrodeposited Cu-Zn-Sn precursors. These ternary alloys were deposited in one step from a cyanide-free alkaline electrolyte containing Cu(II), Zn(II) and Sn(IV) metal salts on Mo-coated glass substrates. The solar cell was completed by a chemical bath-deposited US buffer layer and a sputtered i-ZnO/ZnO:Al bilayer. The best solar cell performance was obtained with Cu-poor samples. A total area (0.5 cm(2)) efficiency of 3.4% is achieved (V-oc=563 mV, j(sc)=14.8 mA/cm(2), FF=41%) with a maximum external quantum efficiency (EQE) of 80%. The estimated band-gap energy from the external quantum efficiency (EQE) measurements is about 1.54 eV. Electron backscatter-diffraction maps of cross-section samples revealed CZTS grain sizes of up to 10 mu m. Elemental distribution maps of the CZTS absorber show Zn-rich precipitates, probably ZnS, and a Zn-poor region, presumably Cu2SnS3, close to the interface Mo/CZTS. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2511 / 2514

页数：4

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