Energetics of AlN thin films and the implications for epitaxial growth on SiC

被引：23

作者：

DiFelice, R ^{[1
]}

Northrup, JE ^{[1
]}

Neugebauer, J ^{[1
]}

机构：

[1] FRITZ HABER INST, D-14195 BERLIN, GERMANY

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.54.R17351

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present an ab initio study of the energetics of thin films of AIN on the Si-terminated SiC(0001) surface. We demonstrate the existence of a vacancy-stabilized NAl wetting layer that can be obtained in both the root 3x root 3 and 2x2 reconstructions through an N-rich deposition of Al and N. We show that the latter reconstruction is compatible with a nonabrupt neutral interface which promotes the formation of thick overlayers. Our study of the competition between two-dimensional and three-dimensional growth reveals that only large islands(r(c) greater than or equal to 60 Angstrom) are stable with respect to the initial two-dimensional phase.

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页码：17351 / 17354

页数：4

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