Porosity effects on low-k dielectric film strength and interfacial adhesion

被引：43

作者：

Kloster, G ^{[1
]}

Scherban, T ^{[1
]}

Xu, G ^{[1
]}

Blaine, J ^{[1
]}

Sun, B ^{[1
]}

Zhou, Y ^{[1
]}

机构：

[1] Intel Corp, Log Technol Dev, Hillsboro, OR 97124 USA

来源：

PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年

关键词：

D O I：

10.1109/IITC.2002.1014946

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The elastic modulus and hardness of low k dielectric films rapidly decrease as porosity increases. By contrast, interfacial adhesion is relatively insensitive to porosity. Adhesion energy values measured by the four-point bend method are similar for porous and non-porous films. Additionally, interfacial adhesion is much stronger for polymer films than for organosiloxane films, regardless of porosity. E-beam treatments significantly improve the modulus and hardness of porous organosiloxane films, sacrificing only a slight increase in dielectric constant. Solid-state NMR and pore size measurements indicate that the improved mechanical properties result from a cross-linking mechanism rather than macroscopic densification. TOFSIMS results show that the increased dielectric constant results from carbon loss and an increase in silanol concentration. E-beam treatments, however, do not improve interfacial adhesion significantly.

引用

页码：242 / 244

页数：3