RF performance and thermal analysis of AlGaN/GaN power HEMTs in presence of self-heating effects

被引：7

作者：

Nuttinck, S ^{[1
]}

Gebara, E ^{[1
]}

Laskar, J ^{[1
]}

Wagner, B ^{[1
]}

Harris, M ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Yamacraw Design Ctr, Atlanta, GA 30332 USA

来源：

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年

关键词：

D O I：

10.1109/MWSYM.2002.1011780

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Power, linearity and noise performance of AlGaN/GaN power HEMTs are measured at different gate-to-source bias conditions in order to study the influence of self-heating on device RF performance. Additionally, a load-pull system, capable of measuring intermodulation distortion products under pulsed mode of operation, is implemented for the first time. This new system is used to investigate the impact of self-heating on power devices' linearity. Also, for the first time, the effect of the RF drive on thermal effects and power added efficiency (PAE) is investigated. This forms the basis of more accurate nonlinear models. Finally, thermal simulations of 2-finger GaN FETs are performed under pulsed and continuous regime to determine the temperature distribution caused by a 5W/mm power dissipation density.

引用

页码：921 / 924

页数：4

共 16 条

[1]

CHEN CH, 1999, ELECT LETT, V35

[2] Cascode connected AlGaN/GaN HEMT's on SiC substrates [J].

Green, BM ;

Chu, KK ;

Smart, JA ;

Tilak, V ;

Kim, H ;

Shealy, JR ;

Eastman, LF .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 2000, 10 (08) :316-318

[3] The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's [J].

Green, BM ;

Chu, KK ;

Chumbes, EM ;

Smart, JA ;

Shealy, JR ;

Eastman, LF .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (06) :268-270

[4] Degradation characteristics of AlGaN/GaN high electron mobility transistors [J].

Kim, H ;

Tilak, V ;

Green, BM ;

Cha, HY ;

Smart, JA ;

Shealy, JR ;

Eastman, LF .

39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001, 2001, :214-218

[5] INFLUENCE OF LATTICE SELF-HEATING AND HOT-CARRIER TRANSPORT ON DEVICE PERFORMANCE [J].

LIANG, MC ;

LAW, ME .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) :2391-2398

[6]

MISHRA UK, 1997, TOP S MILL WAV P

[7]

NUTTINCK S, 2001, IEEE MTT S PHOEN P, V3, P2151

[8]

NUTTINCK S, 2001, IEEE T MTT, V49

[9]

SCOTT J, 1996, IEEE T MTT, V44

[10] High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates [J].

Sheppard, ST ;

Doverspike, K ;

Pribble, WL ;

Allen, ST ;

Palmour, JW ;

Kehias, LT ;

Jenkins, TJ .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (04) :161-163

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