Ultraviolet light assisted oxidation for magnetic tunnel junctions

被引：17

作者：

Rottländer, P

Kohlstedt, H

Grünberg, P

Girgis, E

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

[2] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.372614

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recently, ferromagnetic tunnel junctions attracted much interest because they exhibit large magnetoresistance effects up to Delta R/R=40% at room temperature. In this paper, an alternative approach will be presented, i.e., exposing the aluminum film to ultraviolet light during oxidation. The underlying mechanism can be explained in the framework of the Cabrera-Mott theory of oxidation. With UV assisted oxidation, magnetoresistance ratios of up to 22.5% at room temperature have been obtained in Ni80Fe20-Al(ox)-Co junctions. The resistivities were in the 1 k Omega mu m(2) range for junctions of 25-400 mu m(2). Barrier heights obtained by fitting to different theories will be discussed. (C) 2000 American Institute of Physics. [S0021-8979(00)55308-0].

引用

页码：6067 / 6069

页数：3

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