Theoretical model of performance of a silicon piezoresistive pressure

被引:14
作者
Perraud, E
机构
[1] Motorola, SPD, Le Mirail, 31023 Toulouse, Cedex
关键词
piezoresistive pressure sensors; silicon;
D O I
10.1016/S0924-4247(97)80121-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper will describe briefly the two kinds of signal-conditioning interfaces of silicon piezoresistive pressure sensors: hardware compensation and software compensation. A detailed model of the accuracy budget for both approaches is explained. It will be shown that the device-to-device variations of the temperature coefficient of offset are a critical element, and that a calibration of this coefficient is unavoidable to get an accuracy of about 1% full scale. It will also be demonstrated that the ADC resolution is the key parameter in a software-compensation approach, and that the resolutions of the feedback loops for offset and gain adjustments are the key parameters in a hardware approach. When the sensor interface is optimized, the performance depends on the sensor non-linearity and on the temperature-reading error.
引用
收藏
页码:245 / 252
页数:8
相关论文
共 6 条
[1]  
BRYZEK J, 1993, P SENSOR EXPO 93
[2]  
KRESS HJ, 1991, SENSOR ACTUAT A-PHYS, V25, P21
[3]  
KRESS J, 1995, SENSOR ACTUATOR, P35
[4]  
*MOT, MOT SENS DEV DAT
[5]  
Ristic L., SENSOR TECHNOLOGY
[6]  
SZE SM, 1994, SEMICONDUCTOR SENSOR, pCH10