Different origins of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods

被引:617
作者
Li, D
Leung, YH
Djurisic, AB
Liu, ZT
Xie, MH
Shi, SL
Xu, SJ
Chan, WK
机构
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Univ Hong Kong, Dept Chem, Hong Kong, Hong Kong, Peoples R China
关键词
D O I
10.1063/1.1786375
中图分类号
O59 [应用物理学];
学科分类号
摘要
We prepared ZnO nanostructures using chemical and thermal evaporation methods. The properties of the fabricated nanostructures were studied using scanning electron microscopy, x-ray diffraction, photoluminescence, and electron paramagnetic resonance (EPR) spectroscopy. It was found that the luminescence in the visible region has different peak positions in samples prepared by chemical and evaporation methods. The samples fabricated by evaporation exhibited green luminescence due to surface centers, while the samples fabricated by chemical methods exhibited yellow luminescence which was not affected by the surface modification. No relationship was found between green emission and gsimilar to1.96 EPR signal, while the sample with yellow emission exhibited strong EPR signal. (C) 2004 American Institute of Physics.
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页码:1601 / 1603
页数:3
相关论文
共 29 条
  • [1] LUMINESCENT TRANSITIONS ASSOCIATED WITH DIVALENT COPPER IMPURITIES AND GREEN EMISSION FROM SEMICONDUCTING ZINC OXIDE
    DINGLE, R
    [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 579 - &
  • [2] Visible photoluminescence in ZnO tetrapod and multipod structures
    Djurisic, AB
    Leung, YH
    Choy, WCH
    Cheah, KW
    Chan, WK
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (14) : 2635 - 2637
  • [3] Role of copper in the green luminescence from ZnO crystals
    Garces, NY
    Wang, L
    Bai, L
    Giles, NC
    Halliburton, LE
    Cantwell, G
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (04) : 622 - 624
  • [4] Production of nitrogen acceptors in ZnO by thermal annealing
    Garces, NY
    Giles, NC
    Halliburton, LE
    Cantwell, G
    Eason, DB
    Reynolds, DC
    Look, DC
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (08) : 1334 - 1336
  • [5] Low-temperature wafer-scale production of ZnO nanowire arrays
    Greene, LE
    Law, M
    Goldberger, J
    Kim, F
    Johnson, JC
    Zhang, YF
    Saykally, RJ
    Yang, PD
    [J]. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2003, 42 (26) : 3031 - 3034
  • [6] Enhancement of band-edge photoluminescence of bulk ZnO single crystals coated with alkali halide
    Harada, Y
    Hashimoto, S
    [J]. PHYSICAL REVIEW B, 2003, 68 (04)
  • [7] Kaldis E, 1981, CURRENT TOPICS MATER, V7
  • [8] The influence of defect drift in external electric field on green luminescence of ZnO single crystals
    Korsunska, NO
    Borkovska, LV
    Bulakh, BM
    Khomenkova, LY
    Kushnirenko, VI
    Markevich, IV
    [J]. JOURNAL OF LUMINESCENCE, 2003, 102 : 733 - 736
  • [9] Green luminescent center in undoped zinc oxide films deposited on silicon substrates
    Lin, BX
    Fu, ZX
    Jia, YB
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (07) : 943 - 945
  • [10] POINT-DEFECTS AND LUMINESCENCE-CENTERS IN ZINC-OXIDE AND ZINC-OXIDE DOPED WITH MANGANESE
    LIU, M
    KITAI, AH
    MASCHER, P
    [J]. JOURNAL OF LUMINESCENCE, 1992, 54 (01) : 35 - 42