Confocal Raman Microscopy across the Metal-Insulator Transition of Single Vanadium Dioxide Nanoparticles

被引：113

作者：

Donev, Eugenii U. ^{[1
,2
]}

Lopez, Rene ^{[3
,4
]}

Feldman, Leonard C. ^{[1
,2
,5
]}

Haglund, Richard F., Jr. ^{[1
,2
]}

机构：

[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Vanderbilt Inst Nanoscale Sci & Engn, Nashville, TN 37235 USA

[3] Univ N Carolina, Dept Phys & Astron, Chapel Hill, NC 27514 USA

[4] Univ N Carolina, Inst Adv Mat, Chapel Hill, NC 27514 USA

[5] Rutgers State Univ, Inst Adv Mat Devices & Nanotechnol, Piscataway, NJ 08854 USA

来源：

NANO LETTERS | 2009年 / 9卷 / 02期

基金：

美国能源部; 美国国家科学基金会;

关键词：

SEMICONDUCTOR PHASE-TRANSITION; SURFACE-PLASMON RESONANCE; THIN-FILMS; MOTT-HUBBARD; BAND THEORY; ION-IMPLANTATION; VO2; NANORODS; HYSTERESIS; NUCLEATION; PEIERLS;

D O I：

10.1021/nl8031839

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present the first Raman scattering measurements on nanoparticulate vanadium dioxide (VO2), as well as the first observations of the temperature-induced phase transition in individual VO2 nanoparticles (NPs). We compare the Raman response of two VO2 NPs and a companion VO2 film undergoing their monoclinic-tetragonal-monoclinic transformations and offer qualitative explanations for the large observed differences in hysteresis width. While bulk crystals and contiguous films contain numerous nucleation sites, individual NPs likely harbor only a few, which may make it possible to correlate detectable defects (e.g., grain boundaries and dislocations) with the "ease" of switching phases, as quantified by the width of the thermal hysteresis.

引用

页码：702 / 706

页数：5

共 56 条

[1] Effect of grain sizes on the metal-semiconductor phase transition in vanadium dioxide polycrystalline thin films [J].

Aliev, R. A. ;

Andreev, V. N. ;

Kapralova, V. M. ;

Klimov, V. A. ;

Sobolev, A. I. ;

Shadrin, E. B. .

PHYSICS OF THE SOLID STATE, 2006, 48 (05) :929-934

[2] 4D visualization of transitional structures in phase transformations by electron diffraction [J].

Baum, Peter ;

Yang, Ding-Shyue ;

Zewail, Ahmed H. .

SCIENCE, 2007, 318 (5851) :788-792

[3] Dynamical singlets and correlation-assisted peierls transition in VO2 -: art. no. 026404 [J].

Biermann, S ;

Poteryaev, A ;

Lichtenstein, AI ;

Georges, A .

PHYSICAL REVIEW LETTERS, 2005, 94 (02) :1-4

[4] Optimization of the rolling-circle filter for Raman background subtraction [J].

Brandt, NN ;

Brovko, OO ;

Chikishev, AY ;

Paraschuk, OD .

APPLIED SPECTROSCOPY, 2006, 60 (03) :288-293

[5] Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films -: art. no. 051910 [J].

Brassard, D ;

Fourmaux, S ;

Jean-Jacques, M ;

Kieffer, JC ;

El Khakani, MA .

APPLIED PHYSICS LETTERS, 2005, 87 (05)

[6] Evidence for a structurally-driven insulator-to-metal transition in VO2:: A view from the ultrafast timescale -: art. no. 161102 [J].

Cavalleri, A ;

Dekorsy, T ;

Chong, HHW ;

Kieffer, JC ;

Schoenlein, RW .

PHYSICAL REVIEW B, 2004, 70 (16) :1-4

[7]

CECH RE, 1956, T AM I MIN MET ENG, V206, P124

[8] STATISTICS OF MARTENSITIC NUCLEATION [J].

CHEN, IW ;

CHIAO, YH ;

TSUZAKI, K .

ACTA METALLURGICA, 1985, 33 (10) :1847-1859

[9] Size-dependent melting of silica-encapsulated gold nanoparticles [J].

Dick, K ;

Dhanasekaran, T ;

Zhang, ZY ;

Meisel, D .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2002, 124 (10) :2312-2317

[10]

GOODENOUGH JB, 1971, AM CERAM SOC BULL, V50, P390

← 1 2 3 4 5 6 →