CVD TiSiN diffusion barrier integration in sub-130 nm technology nodes

被引:9
作者
Prindle, C [1 ]
Brennan, B
Denning, D
Shahvandi, I
Guggilla, S
Chen, L
Marcadal, C
Deyo, D
Bhandary, U
机构
[1] Motorola Inc, Austin, TX 78721 USA
[2] Adv Micro Devices Inc, Austin, TX USA
[3] Appl Mat Inc, Santa Clara, CA 95054 USA
[4] Appl Mat Inc, Austin, TX USA
来源
PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年
关键词
D O I
10.1109/IITC.2002.1014927
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Metalorganic chemical vapor deposition (MOCVD) titanium silicon nitride (TiSiN) has emerged as a strong candidate for a next-generation diffusion barrier material in copper/low-k dielectric back-end-of-line (BEOL) device fabrication. As ionized physical vapor deposition (PVD) Ta(N) barriers currently used in high-volume production begin to exhibit marginal film continuity in high aspect ratio device features, more conformal barrier materials become a requirement. Material, electrical, and reliability properties are strongly influenced by CVD TiSiN film thickness, process sequencing, and incoming surface cleanliness of device features. TiSiN has been shown to possess the necessary material and electrical properties to be successfully integrated in sub-130 nm copper/low-k semiconductor device technology nodes.
引用
收藏
页码:182 / 184
页数:3
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