Luminescence imaging - a well-established technique to study material- and device-related problems

被引：6

作者：

Baeumler, M ^{[1
]}

Fitz, C ^{[1
]}

Weinberg, U ^{[1
]}

Wagner, J ^{[1
]}

Jantz, W ^{[1
]}

机构：

[1] Fraunhofer Inst Angew Festkorperphys, D-79108 Freiburg, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 66卷 / 1-3期

关键词：

photoluminescence topography; photoluminescence microscopy; substrate; epitaxial layer; failure analysis;

D O I：

10.1016/S0921-5107(99)00133-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The assessment of the lateral homogeneity of substrates and epitaxial layers requires techniques that are capable of measuring the full wafer area as well as microscopic defect structures. Optical imaging combines fast, nondestructive data acquisition with high lateral resolution. The present technical status of two complementary imaging techniques - photoluminescence topography and photoluminescence microscopy - are reviewed. Typical examples of material and process analysis with photoluminescence topography are reported, including the assessment of epitaxial layer and substrate homogeneity as well as detailed investigations to determine the mesoscopic distribution of accepters in semi-insulating GaAs. To demonstrate the merits of photoluminescence microscopy, luminescence images of substrate and growth-induced defect structures in epitaxial layers are presented. Recent photoluminescence microscopy investigations of the failure mechanisms responsible for performance degradation of laser diodes are described. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：131 / 140

页数：10

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