Effect of electrical boundary conditions on ferroelectric domain structures in thin films

被引：245

作者：

Li, YL ^{[1
]}

Hu, SY ^{[1
]}

Liu, ZK ^{[1
]}

Chen, LQ ^{[1
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 03期

关键词：

D O I：

10.1063/1.1492025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The domain structures in a ferroelectric thin film are studied using a phase-field model. A cubic-to-tetragonal ferroelectric phase transition in lead titanate thin film is considered. Both elastic interactions and electrostatic interactions are taken into account. The focus is on the effect of electrical boundary conditions on the domain morphologies and volume fractions. It is shown that different electric boundary conditions may have a significant effect on the domain structures. (C) 2002 American Institute of Physics.

引用

页码：427 / 429

页数：3

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