Origin of the Hysteresis in I-V Curves for Planar Structure Perovskite Solar Cells Rationalized with a Surface Boundary-induced Capacitance Model

被引：88

作者：

Cojocaru, Ludmila ^{[1
]}

Uchida, Satoshi ^{[2
]}

Jayaweera, Piyankarage V. V. ^{[3
]}

Kaneko, Shoji ^{[3
]}

Nakazaki, Jotaro ^{[1
]}

Kubo, Takaya ^{[1
]}

Segawa, Hiroshi ^{[1
]}

机构：

[1] Univ Tokyo, Res Ctr Adv Sci & Technol, Meguro Ku, Tokyo 1538904, Japan

[2] Univ Tokyo, Komaba Org Educ Excellence Coll Arts & Sci, Meguro Ku, Tokyo 1538902, Japan

[3] SPD Lab Inc, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan

来源：

CHEMISTRY LETTERS | 2015年 / 44卷 / 12期

关键词：

LAYER;

D O I：

10.1246/cl.150933

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

For efficient hybrid solar cells based on organometal halide perovskites, the real origin of the I-V hysteresis became a big issue and has been discussed widely. In this study, simulated I-V curves of different equivalent circuit models were validated with experimental I-V curves of a planar perovskite solar cell with the power conversion efficiency (PCE) of 18.0% and 8.8% on reverse scan (from open circuit to short circuit) and forward scan (from short circuit to open circuit), respectively. We found that an equivalent circuit model with a series of double diodes, capacitors, shunt resistances, and single series resistance produces simulated I-V curves with large hysteresis matching with the experimentally observed curves. The electrical capacitances generated by defects due to the lattice mismatch at the TiO2/CH3NH3PbI3 and CH3NH3PbI3/spiro-OMeTAD interface are truly responsible for the hysteresis in perovskite solar cells.

引用

页码：1750 / 1752

页数：3

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