Blue InGaN-based laser diodes with an emission wavelength of 450 nm

被引：274

作者：

Nakamura, S ^{[1
]}

Senoh, M ^{[1
]}

Nagahama, S ^{[1
]}

Iwasa, N ^{[1
]}

Matsushita, T ^{[1
]}

Mukai, T ^{[1
]}

机构：

[1] Nichia Chem Corp, Dept Res & Dev, Tokushima 774, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.125643

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Blue InGaN single-quantum-well-structure laser diodes (LDs) with an emission wavelength of 450 nm were grown on an epitaxially laterally overgrown GaN substrate by a metalorganic chemical vapor deposition method. The threshold current density and voltage were 4.6 kA cm(-2) and 6.1 V, respectively. The estimated lifetime was approximately 200 h under room-temperature continuous-wave operation at an output power of 5 mW. When the number of InGaN well layers of the LDs with emission wavelengths longer than 435 nm varied from one to three, the lowest threshold current density was obtained when the number of well layers was one. (C) 2000 American Institute of Physics. [S0003-6951(00)03701-3].

引用

页码：22 / 24

页数：3

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