Single-photon generation with InAs quantum dots

被引:108
作者
Santori, C [1 ]
Fattal, D
Vuckovic, J
Solomon, GS
Yamamoto, Y
机构
[1] Stanford Univ, Edward L Ginzton Lab, JST, ICORP,Quantum Entanglement Project, Stanford, CA 94305 USA
[2] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538904, Japan
[3] NTT Basic Res Labs, Atsugi, Kanagawa, Japan
来源
NEW JOURNAL OF PHYSICS | 2004年 / 6卷
关键词
D O I
10.1088/1367-2630/6/1/089
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Single-photon generation using InAs quantum dots in pillar microcavities is described. The effects on performance of the excitation wavelength and polarization, and the collection bandwidth and polarization, are studied in detail. The efficiency and photon state purity of these devices have been measured, and issues affecting these parameters are discussed. Prospects for improved devices are also discussed.
引用
收藏
页码:1 / 16
页数:16
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