Multiparametric electrochemical characterisation of Te-Cu-Pb atomic three-layer structure deposition on polycrystalline gold

被引:24
作者
Bondarenko, Alexander S. [1 ]
Ragoisha, Genady A. [1 ]
Osipovich, Nikolai P. [1 ]
Streltsov, Eugene A. [1 ]
机构
[1] Belarusian State Univ, Physicochem Res Inst, Minsk 220050, BELARUS
关键词
underpotential deposition; adlayer; potentiodynamic; electrochemical impedance spectroscopy; tellurium; copper; lead;
D O I
10.1016/j.elecom.2006.03.033
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Successive underpotential deposition of Te-ad, Cu-ad and Pb-ad adlayers in the potentiodynamic mode was used for Te-ad/Cu-ad/Pb-ad atomic three-layer structure assembling on polycrystalline Au support. Layer-by-layer deposition was characterised in each of the stages with potentiodynamic electrochemical impedance spectroscopy (PDEIS) by variations, with the electrode potential E, of double layer pseudocapacitance Q(dl), charge transfer resistance R-ct and Warburg coefficient A of diffusion impedance. Q(dl)(E) has shown a strong decrease in the cathodic scan during Te atomic layer deposition on Au, a sharp peak in the subsequent Cu-ad deposition on Au/Te-ad and an increase in Pb-ad deposition on Au/Te-ad/Cu-ad. The inverses of charge transfer resistance and Warburg coefficient have shown characteristic maxima in R-et(-1) (E) and A(-1)(E) dependencies in all the three stages of Te-ad/Cu-ad/Pb-ad three-layer assembling. The characteristic features in the dependences on the potential of the ac response parameters compensated for insufficient self-descriptiveness of the do part of the nonstationary interface response in the layer-by-layer deposition. High information density of PDEIS spectra provides better control of electrochemical processes on nonstationary interfaces and this new opportunity can enable wider use of electrochemical approaches for thin-layer structures preparation. (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:921 / 926
页数:6
相关论文
共 43 条
[1]  
ADZIC RR, 1984, ADV ELECTROCH EL ENG, V13, P159
[2]   Variable Mott-Schottky plots acquisition by potentiodynamic electrochemical impedance spectroscopy [J].
Bondarenko, A ;
Ragoisha, G .
JOURNAL OF SOLID STATE ELECTROCHEMISTRY, 2005, 9 (12) :845-849
[3]  
Bondarenko AS, 2005, PROGRESS IN CHEMOMETRICS RESEARCH, P89
[4]   Potentiodynamic electrochemical impedance spectroscopy of lead upd on polycrystalline gold and on selenium atomic underlayer [J].
Bondarenko, AS ;
Ragoisha, GA ;
Osipovich, NP ;
Streltsov, EA .
ELECTROCHEMISTRY COMMUNICATIONS, 2005, 7 (06) :631-636
[5]   Formation of thin films of CdTe, CdSe, and CdS by electrochemical atomic layer epitaxy [J].
Colletti, LP ;
Flowers, BH ;
Stickney, JL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (05) :1442-1449
[6]  
CONVAY BE, 1984, PROG SURF SCI, V16, P1
[7]   Atomic layer epitaxy of CdTe using an automated electrochemical thin-layer flow deposition reactor [J].
Flowers, BH ;
Wade, TL ;
Garvey, JW ;
Lay, M ;
Happek, U ;
Stickney, JL .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 2002, 524 :273-285
[8]   Electrosorption valency and partial charge transfer in halide and sulfide adsorption on Ag(111) [J].
Foresti, ML ;
Innocenti, M ;
Forni, F ;
Guidelli, R .
LANGMUIR, 1998, 14 (24) :7008-7016
[9]   Electrochemical atomic layer epitaxy deposition of CdS on Ag(111): An electrochemical and STM investigation [J].
Foresti, ML ;
Pezzatini, G ;
Cavallini, M ;
Aloisi, G ;
Innocenti, M ;
Guidelli, R .
JOURNAL OF PHYSICAL CHEMISTRY B, 1998, 102 (38) :7413-7420
[10]   Resonance Raman scattering and scanning tunneling spectroscopy of CdS thin films grown by electrochemical atomic layer epitaxy - thickness dependent phonon and electronic properties [J].
Gichuhi, A ;
Boone, BE ;
Shannon, C .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 2002, 522 (01) :21-25