Polycrystalline pentacene thin films for large area electronic applications

被引：54

作者：

Knipp, D ^{[1
]}

Street, RA ^{[1
]}

Krusor, B ^{[1
]}

Apte, R ^{[1
]}

Ho, J ^{[1
]}

机构：

[1] Xerox PARC, Palo Alto, CA 94304 USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 299卷

关键词：

D O I：

10.1016/S0022-3093(01)01070-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The growth of and the electronic transport in pentacene films on organic and inorganic dielectrics were studied. The morphology and structural properties of pentacene films are clearly correlated with the deposition parameters and substrate properties. To study the electronic properties we have formed inverted staggered transistors. The mobility in the transistors is correlated with the structural properties of the films and increases with crystal size. The TFTs exhibit typical mobilities of 0.4 cm(2)/V s and on/off ratios > 10(8) on thermal oxide and smooth silicon nitride. The dielectric's influence on device performance will be discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1042 / 1046

页数：5

共 7 条

[1]

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[2]

KNIPP D, 2001, IN PRESS MAT RES SOC

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