Aluminum oxynitride coatings for oxidation resistance of epoxy films

被引:20
作者
Ianno, NJ
Enshashy, H
Dillon, RO
机构
[1] Univ Nebraska, Ctr Microelect & Opt Mat Res, Lincoln, NE 68588 USA
[2] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA
关键词
atomic force microscopy; X-ray diffraction; reactive sputtering; nitrides oxides; aluminum;
D O I
10.1016/S0257-8972(02)00051-8
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Aluminum nitride (AlN) and aluminum oxynitride (AlNO) films were sputter deposited onto epoxy coated silicon substrates. The films were characterized by: electron microscopy; atomic force microscopy: theta-2theta X-ray diffractometry; and profilometry. The surface morphology of the films was a function of the feed gas oxygen content. Amorphous aluminum oxynitride films formed with oxygen flows of more than 0.5 seem yielded smooth, continuous coatings over the epoxy. The oxynitride/epoxy/silicon structure was exposed in an electron cyclotron resonance low Earth orbit simulator, and showed 2-3 nm roughening up to the maximum fluence of 2.4 x 10(22) atoms/cm(2). This is equivalent to 94-940 days in low Earth orbit, depending on orbit height. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:130 / 135
页数:6
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