Highly oriented alpha-alumina films grown by pulsed laser deposition

被引：26

作者：

Hirschauer, B ^{[1
]}

Soderholm, S ^{[1
]}

Chiaia, G ^{[1
]}

Karlsson, UO ^{[1
]}

机构：

[1] ABB CORP RES, DEPT D, S-72178 VASTERAS, SWEDEN

来源：

THIN SOLID FILMS | 1997年 / 305卷 / 1-2期

关键词：

alpha-Al2O3; film; laser ablation; pulsed laser deposition; temperature dependence; XPS; X-ray diffraction;

D O I：

10.1016/S0040-6090(97)00151-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly oriented thin films of alpha-alumina have been grown by pulsed laser deposition on Si(lll). The influence of the substrate temperature on the film growth was studied by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (MID). Ablation at temperatures between room temperature and 850 degrees C gave rise to incorporated crystalline aluminium (Al), while the stoichiometric and highly oriented alpha-Al2O3 films were obtained only at 850 degrees C. The XRD rocking curve measurements of the ablated films showed the full-width-at-half-maximum (FWHM) Of 0.2 degrees. Further annealing at 1000 degrees C in air for 26 h slightly improved out-of-plane orientation. (C) 1997 Elsevier Science S.A.

引用

页码：243 / 247

页数：5

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