Nucleation, growth, and relaxation of thin Films: Metal(100) homoepitaxial systems

被引：38

作者：

Thiel, PA ^{[1
]}

Evans, JW

机构：

[1] Iowa State Univ, Dept Chem, Ames, IA 50011 USA

[2] Iowa State Univ, Dept Math, Ames, IA 50011 USA

[3] Iowa State Univ, Ames Lab, Ames, IA 50011 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2000年 / 104卷 / 08期

关键词：

D O I：

10.1021/jp9933471

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We describe work in our laboratory that has shed new light on nucleation, growth, and relaxation processes in thin metal films. The progress comes from the synergistic and synchronous implementation of theory and experiment, which reveals surprising secrets hidden a very simple model system.

引用

收藏

页码：1663 / 1676

页数：14

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