Electrical characteristics of GaN/6H-SiC n-p heterojunctions

n-Type GaN layers of high crystalline quality have been grown on p-type 6H-SiC substrates by HVPE. The electronic properties of the n-p heterojunctions indicate a typical diode behaviour. The turn-on voltage of the forward I-TI characteristic is about 2 V while the reverse characteristic showing an abrupt breakdown at voltage close to 30 V. Using C-V measurements, the density of interface traps has been estimated to be 7 x 10(12) cm (-2). These interface traps limit the current transport in the p-6H-SiC/n-GaN heterojunction. (C) 1997 Published by Elsevier Science S.A.