Infrared continuous-wave laser gain in neodymium aluminum borate:: A promising candidate for microchip diode-pumped solid state lasers

被引:57
作者
Jaque, D
Enguita, O
Solé, JG
Jiang, AD
Luo, ZD
机构
[1] Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain
[2] Chinese Acad Sci, Fujian Inst Res Struct Matter, Fujian 350002, Peoples R China
关键词
D O I
10.1063/1.126289
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter, continuous-wave laser gain at 1.06 and 1.3 mu m is demonstrated in the neodymium aluminum borate [NdAl3(BO3)(4)] system. End pumping is achieved by means of a tunable argon-pumped Ti:sapphire and a diode laser. We report on low absorbed pump power at threshold and high pump-to-laser conversion efficiencies (up to 43% and 25% for laser oscillations at 1.06 and 1.3 mu m, respectively) in a 0.3 mm long crystal. These good laser properties together with some other spectroscopic parameters described in this work (such as a 100% absorbance, a broad absorption spectrum around 800 nm and high emission cross section at 1.3 mu m) make NdAl3(BO3)(4) a promising material for diode-pumped microchip lasers. (C) 2000 American Institute of Physics. [S0003-6951(00)04916-0].
引用
收藏
页码:2176 / 2178
页数:3
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