Time-of-flight photocurrents in expanding-thermal-plasma-deposited a-Si:H

被引：21

作者：

Brinza, M

Adriaenssens, GJ

Iakoubovskii, K

Stesmans, A

Kessels, WMM

Smets, AHM

van de Sanden, MCM

机构：

[1] Univ Leuven, Lab Halfgeleiderfys, B-3001 Leuven, Belgium

[2] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 299卷

关键词：

D O I：

10.1016/S0022-3093(01)01178-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Time-of-flight (TOF) photocurrent investigations of hydrogenated amorphous silicon (a-Si:H) layers produced by means of an expanding thermal plasma (ETP) reveal a hole drift mobility that is. for depositions near 450 degreesC, consistenly one order of magnitude higher than the corresponding mobility in standard PECVD samples. Electron drift mobilities and mutau products do not show such differences. The electronic density of states contains a prominent band of deep traps and the materials show evidence for non-amorphous inclusions. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：420 / 424

页数：5

共 7 条

[1]

Adriaenssens GJ, 2000, J OPTOELECTRON ADV M, V2, P31

[2] TRANSIENT PHOTOCHARGE MEASUREMENTS AND ELECTRON-EMISSION FROM DEEP LEVELS IN UNDOPED A-SI-H [J].