Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films

被引:206
作者
Wehrenfennig, Christian [1 ]
Liu, Mingzhen [1 ]
Snaith, Henry J. [1 ]
Johnston, Michael B. [1 ]
Herz, Laura M. [1 ]
机构
[1] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
来源
APL MATERIALS | 2014年 / 2卷 / 08期
基金
英国工程与自然科学研究理事会;
关键词
HYBRID SOLAR-CELLS; EFFICIENT; TRANSITIONS; MOBILITIES; TRIHALIDE; CH3NH3PBX3; TRANSPORT; EXCITON; LENGTHS; TIN;
D O I
10.1063/1.4891595
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The optoelectronic properties of the mixed hybrid lead halide perovskite CH3NH3PbI3-xClx have been subject to numerous recent studies related to its extraordinary capabilities as an absorber material in thin film solar cells. While the greatest part of the current research concentrates on the behavior of the perovskite at room temperature, the observed influence of phonon-coupling and excitonic effects on charge carrier dynamics suggests that low-temperature phenomena can give valuable additional insights into the underlying physics. Here, we present a temperature-dependent study of optical absorption and photoluminescence (PL) emission of vapor-deposited CH3NH3PbI3-xClx exploring the nature of recombination channels in the room-and the low-temperature phase of the material. On cooling, we identify an up-shift of the absorption onset by about 0.1 eV at about 100 K, which is likely to correspond to the known tetragonal-to-orthorhombic transition of the pure halide CH3NH3PbI3. With further decreasing temperature, a second PL emission peak emerges in addition to the peak from the room-temperature phase. The transition on heating is found to occur at about 140 K, i.e., revealing significant hysteresis in the system. While PL decay lifetimes are found to be independent of temperature above the transition, significantly accelerated recombination is observed in the low-temperature phase. Our data suggest that small inclusions of domains adopting the room-temperature phase are responsible for this behavior rather than a spontaneous increase in the intrinsic rate constants. These observations show that even sparse lower-energy sites can have a strong impact on material performance, acting as charge recombination centres that may detrimentally affect photovoltaic performance but that may also prove useful for optoelectronic applications such as lasing by enhancing population inversion. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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页数:10
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