Magnetic-field-induced metal-insulator transition in perovskite-type manganese oxides

被引：21

作者：

Tomioka, Y ^{[1
]}

Asamitsu, A ^{[1
]}

Kuwahara, H ^{[1
]}

Moritomo, Y ^{[1
]}

Kasai, M ^{[1
]}

Kumai, R ^{[1
]}

Tokura, Y ^{[1
]}

机构：

[1] UNIV TOKYO, DEPT APPL PHYS, BUNKYO KU, TOKYO 113, JAPAN

来源：

PHYSICA B-CONDENSED MATTER | 1997年 / 237卷

关键词：

manganese oxides; perovskites; magnetoresistance; metal-insulator transition;

D O I：

10.1016/S0921-4526(97)00013-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The competition between ferromagnetic metallic state due to double exchange and antiferromagnetic nonmetallic state due to an ordering of Mn3+/Mn4+ with 1/1 (charge ordering) has been studied with use of single crystals of perovskite-type manganese oxides prepared by the floating zone method. The charge-ordered state can be altered to a ferromagnetic metallic state by application of a magnetic field, which accompanies a change in resistivity by several orders of magnitude. This is one of the major origin of the colossal magnetoresistance (CMR) in these manganese oxides.

引用

页码：6 / 10

页数：5

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