Diode-pumped passively Q-switched Nd:GdVO4 lasers operating at 1.06 μm wavelength

被引：70

作者：

Li, C ^{[1
]}

Song, J ^{[1
]}

Shen, D ^{[1
]}

Kim, NS ^{[1
]}

Lu, J ^{[1
]}

Ueda, K ^{[1
]}

机构：

[1] Univ Electrocommun, Inst Laser Sci, Tokyo 1828585, Japan

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 2000年 / 70卷 / 04期

关键词：

D O I：

10.1007/s003400050846

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

With a 10-W diode laser to pump Nd:GdVO4 crystal in a folded cavity, we demonstrated Cr4+:YAG passively Q-switched Nd:GdVO4 lasers at 1.06 mu m. The maximum average output power of 2.1 W and the highest peak power of 625 W were, respectively, obtained when the initial transmissions of the Cr4+:YAG crystals were 90% and 80%.

引用

页码：471 / 474

页数：4

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